Controlling Injection Barriers for Ambipolar 2D Semiconductors via Quasi‐van der Waals Contacts

2D crystal semiconductors: Intimate contacts.

news & views devices. Furthermore, separation and recombination of photoinduced electron– hole pairs at a heterojunction interface are primary mechanisms governing the operation of solar cells, photodetectors and light-emitting devices. Both Gong and collaborators and Duan and colleagues managed to electrically address the lateral heterojunctions and perform transport measurements to investigat...

Supporting Information Near-Unity Absorption in Van der Waals Semiconductors for Ultrathin Optoelectronics

Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics.

We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semicond...

Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductors

Highly Efficient and Anomalous Charge Transfer in van der Waals Trilayer Semiconductors.

Two-dimensional materials, such as graphene and monolayer transition metal dichalcogenides, allow the fabrication of multilayer structures without lattice matching restriction. A central issue in developing such artificial materials is to understand and control the interlayer electron transfer process, which plays a key role in harnessing their emergent properties. Recent photoluminescence and ...